leshan radio company, ltd. 1 lmbt5550lt1g lmbt5551lt1g sot?23 high voltage transistors 2 emitter 3 collector 1 base feature device marking and ordering information device marking shipping lmbt5550lt1g m1f 3000/tape&reel lmbt5550lt3g m1f 10000/tape&reel lmbt5551lt1g g1 3000/tape&reel lmbt5551lt3g g1 10000/tape&reel ? we declare that the material of product compliance with rohs requirements. maximum ratings rating symbol value unit collector-emitter voltage mmbt5550 mmbt5551 v ceo 140 160 vdc collector-base voltage mmbt5550 mmbt5551 v cbo 160 180 vdc emitter-base voltage v ebo 6.0 vdc collector current - continuous i c 600 madc thermal characteristics characteristic symbol max unit total device dissipation fr-5 board (note 1) @t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction-to-ambient r ja 556 c/w total device dissipation alumina substrate (note 2) @t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction-to-ambient r ja 417 c/w junction and storage temperature t j , t stg -55 to +150 c 2 3 rev.o 1/5
leshan radio company, ltd. lmbt5550lt1g lmbt5551lt1g 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width = 300 s, duty cycle = 2.0%. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector-emitter breakdown voltage (note 3) (i c = 1.0 madc, i b = 0) lmbt5550 lmbt5551 v (br)ceo 140 160 - - vdc collector-base breakdown voltage (i c = 100 adc, i e = 0) lmbt5550 lmbt5551 v (br)cbo 160 180 - - vdc emitter-base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 6.0 - vdc collector cutoff current (v cb = 100 vdc, i e = 0) lmbt5550 (v cb = 120 vdc, i e = 0) lmbt5551 (v cb = 100 vdc, i e = 0, t a = 100 c) lmbt5550 (v cb = 120 vdc, i e = 0, t a = 100 c) lmbt5551 i cbo - - - - 100 50 100 50 nadc adc emitter cutoff current (v eb = 4.0 vdc, i c = 0) i ebo - 50 nadc on characteristics dc current gain (i c = 1.0 madc, v ce = 5.0 vdc) lmbt5550 lmbt5551 (i c = 10 madc, v ce = 5.0 vdc) lmbt5550 lmbt5551 (i c = 50 madc, v ce = 5.0 vdc) lmbt5550 lmbt5551 h fe 60 80 60 80 20 30 - - 250 250 - - - collector-emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) both types (i c = 50 madc, i b = 5.0 madc) lmbt5550 lmbt5551 v ce(sat) - - - 0.15 0.25 0.20 vdc base-emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) both types (i c = 50 madc, i b = 5.0 madc) lmbt5550 lmbt5551 v be(sat) - - - 1.0 1.2 1.0 vdc collector emitter cut-off (v cb = 10 v) both types (v cb = 75 v) i ces - - 50 100 na rev.o 2/5
leshan radio company, ltd. lmbt5550lt1g lmbt5551lt1g v ce = 1.0 v v ce = 5.0 v i c , collector current (ma) figure 15. dc current gain h fe , dc current gain (normalized) t j = +125c +25c ?55c 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 500 300 200 100 50 30 20 10 7.0 5.0 i b , base current (ma) figure 16. collector saturation region v be , base?emitter voltage (volts) figure 3. collector cut?off region i c , collector current (ma) figure 4. ?on? voltages v ce , collector emitter voltage (volts) i c , collector current ( a) v, voltage (volts) ?0.4 ?0.3 ?0.2 ?0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 10 1 10 0 10 ?1 10 ?2 10 ?3 10 ?4 10 ?5 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 1.0 0.8 0.6 0.4 0.2 0 i c = 1.0 ma t j = 25c 10 ma 30 ma 100 ma 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 1.0 0.8 0.6 0.4 0.2 0 v ce = 30 v t j = 125c 75c 25c i c = i ces reverse forward t j = 25c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 rev.o 3/5
leshan radio company, ltd. lmbt5550lt1g lmbt5551lt1g c obo c, capacitance (pf) 10.2 v v in 10 ms input pulse v bb r b 5.1 k 0.25 mf v in 1n914 v out r c v cc 30 v 3.0 k t r , t f < 10 ns duty cycle = 1.0% t, time (ns) values shown are for i c @ 10 ma figure 6. switching time test circuit i c , collector current (ma) figure 5. temperature coefficients v r , reverse voltage (volts) figure 7. capacitances figure i c , collector current (ma) 8. turn?on time i c , collector current (ma) figure 9. turn?off time t, time (ns) v , temperature coefficient (mv/c) t j = 25c i c /i b = 10 t j = 25c t r @ v cc = 120 v t r @ v cc = 30 v t d @ v eb(off) = 1.0 v v cc = 120 v i c /i b = 10 t j = 25c t f @ v cc = 120 v t f @ v cc = 30 v t s @ v cc = 120 v vc for v ce(sat) vb for v be(sat) t j = ?55c to +135c 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 2.5 2 1.5 1.0 0.5 0 ?0.5 ?1.0 ?1.5 ?2.0 ?2.5 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 c ibo 0.2 0.3 0.7 0.5 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 1000 500 300 200 100 50 30 20 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 5000 3000 2000 1000 500 300 200 100 50 100 ?8.8 v 100 rev.o 4/5
d j k l a c b s h g v 12 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 leshan radio company, ltd. notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 pin 1. base 2. emitter 3. collector 0.031 0.8 sot-23 3 lmbt5550lt1g lmbt5551lt1g rev.o 5/5
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